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IPD048N06L3 G

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IPD048N06L3 G

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 90 A

Mounting Style : SMD/SMT

Tradename : OptiMOS

Minimum Operating Temperature : - 55 C

Package / Case : TO-252-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 60 V

Packaging : Reel

Product Category : MOSFET

Rds On - Drain-Source Resistance : 4.8 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 50 nC

Manufacturer : Infineon Technologies

Description : MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3

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The IPD048N06L3 G,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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