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IPD053N08N3GATMA1

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IPD053N08N3GATMA1

Transistor Polarity : N-Channel

Technology : Si

Id - Continuous Drain Current : 90 A

Mounting Style : SMD/SMT

Minimum Operating Temperature : - 55 C

Package / Case : TO-252-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : 80 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : 2 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 4.4 mOhms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : 20 V

Qg - Gate Charge : 69 nC

Manufacturer : Infineon Technologies

Description : MOSFET MV POWER MOS

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The IPD053N08N3GATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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