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IPG20N10S4L35ATMA1

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IPG20N10S4L35ATMA1

Supplier Device Package : PG-TDSON-8-4

Product Category : MOSFET

Minimum Quantity : 5000

Input Capacitance (Ciss) (Max) @ Vds : 1105pF @ 25V

Package / Case : 8-PowerVDFN

Part Status : Active

Current - Continuous Drain (Id) @ 25°C : 20A

Packaging : Tape & Reel (TR)

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : 2 N-Channel (Dual)

FET Feature : Logic Level Gate

Drain to Source Voltage (Vdss) : 100V

Mounting Type : Surface Mount

Gate Charge (Qg) (Max) @ Vgs : 17.4nC @ 10V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 17A, 10V

Power - Max : 43W

Vgs(th) (Max) @ Id : 2.1V @ 16µA

Series : Automotive, AEC-Q101, OptiMOS™

Manufacturer : Infineon Technologies

Description : MOSFET 2N-CH 8TDSON

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The IPG20N10S4L35ATMA1,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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