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Gate-Emitter Leakage Current : +/- 100 nA
Product Category : IGBT Transistors
Mounting Style : SMD/SMT
Continuous Collector Current at 25 C : 12 A
Pd - Power Dissipation : 77 W
Collector- Emitter Voltage VCEO Max : 600 V
Package / Case : DPAK-3
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Packaging : Reel
Configuration : Single
Collector-Emitter Saturation Voltage : 2 V
Manufacturer : IR / Infineon
Description : IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH
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