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K40H603

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K40H603

Gate-Emitter Leakage Current : 100 nA

Product Category : IGBT Transistors

Mounting Style : Through Hole

Continuous Collector Current at 25 C : 80 A

Pd - Power Dissipation : 306 W

Collector- Emitter Voltage VCEO Max : 600 V

Package / Case : TO-247-3

Maximum Operating Temperature : + 150 C

Packaging : Tube

Maximum Gate Emitter Voltage : 20 V

Collector-Emitter Saturation Voltage : 1.95 V

Manufacturer : Infineon Technologies

Description : IGBT Transistors 600V 40A 306W

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The K40H603,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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