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RGT16NS65DGTL

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RTD (Resistance Temperature Detector) [1016]
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RGT16NS65DGTL

Gate-Emitter Leakage Current : +/- 200 nA

Product Category : IGBT Transistors

Mounting Style : SMD/SMT

Continuous Collector Current at 25 C : 16 A

Collector- Emitter Voltage VCEO Max : 650 V

Pd - Power Dissipation : 94 W

Maximum Operating Temperature : + 175 C

Packaging : Reel

Maximum Gate Emitter Voltage : +/- 30 V

Collector-Emitter Saturation Voltage : 1.65 V

Manufacturer : ROHM Semiconductor

Description : IGBT Transistors 650V 8A IGBT Stop Trench

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The RGT16NS65DGTL,from ROHM Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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