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Beijing Silk Road Enterprise Management Services Co.,LTD
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A2G35S200-01SR3

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A2G35S200-01SR3

Product Category : RF Amplifier

Gain (dB) : 16.1

Output Power (W) : 180

Frequency Min (GHz) : 3.4

Process : GaN

Frequency Max (GHz) : 3.6

Manufacturer : NXP USA Inc.

Description : RF Power Discrete Transistors

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The A2G35S200-01SR3,from NXP USA Inc.,is RF Amplifier.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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