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BFG410W,135

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BFG410W,135

Transistor Polarity : NPN

Technology : Si

Product Category : RF Bipolar Transistors

Mounting Style : SMD/SMT

Transistor Type : Bipolar

Collector- Emitter Voltage VCEO Max : 4.5 V

Package / Case : SOT-343R

DC Collector/Base Gain hfe Min : 50

Packaging : Reel

Configuration : Single

Manufacturer : NXP Semiconductors

Emitter- Base Voltage VEBO : 1 V

Continuous Collector Current : 10 mA

Description : RF Bipolar Transistors Single NPN 4.5V 10mA 54mW 50 22GHz

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The BFG410W,135,from NXP Semiconductors,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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